PART |
Description |
Maker |
EIA1011-2P EIB1011-2P |
10.7-11.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIB1718-2P |
17.7-18.7GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
0-215079-4 0-215079-6 0-215079-8 2-215079-0 8-2150 |
MICRO MATCH FEMALE ON BOARD CONNECTOR
|
Tyco Electronics
|